Effect of collector lateral scaling on performance of high-speed SiGe HBTs with f T > 300 GHz. Rieh, J.-S., Khater, M., Jeseph, A., Freeman, G., & Ahlgren, D. Physics of semiconductor devices (2nd ed.). In Technical digest of international electron devices meeting, pp. The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin. Suppression of boron out-diffusion in SiGe HBT’s by carbon incorporation. S., Hull, R., Buyuklimanli, T., & Magee, C. IEEE Transactions on Electron Devices, 48(11), 2595–2605. Nonequilibrium electron transport in HBTs. New York: McGraw-Hill publishing Company, McGraw-Hill. Scaling of SiGe heterojunction bipolar transistors. Rieh, J.-S., Greenberg, D., Stricker, A., & Freeman, G. In Proceedings of Bipolar/BiCMOS circuits and technology meeting, pp. In Comprehensive semiconductor science and technology. SiGe/Si heterojunction bipolar transistors and circuits. IEEE Transactions on Electron Devices, 42(3), 455–468. Si/SiGe epitaxial-base transistors – Part I: Materials, physics, and circuits. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region. In 2016 IEEE International Electron Devices Meeting (IEDM), pp. SiGe HBT with fT/fmax of 505 GHz/720 GHz. In 2010 International Electron Devices Meeting, 6–8 Dec. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay. SiGe HBTs with cut-off frequency of 350 GHz. Vertical profile optimization of very high frequency epitaxial Si and SiGe-base bipolar transistors. Small-geometry, high-performance, Si-Si 1-xGe x heterojunction bipolar transistors. In Technical digest of international electron device meeting, pp. Silicon-Germanium base heterojunction bipolar transistors by molecular beam epitaxy. Lastly, a couple of exemplary SiGe HBTs and circuits will be introduced to provide the practical aspect of modern high-performance SiGe HBTs. Additional discussion will be made on high-frequency noise and 1/ f noise of SiGe HBTs. Secondly, the RF characteristics of SiGe HBTs will be discussed in terms of f T (cutoff frequency) and f max (maximum oscillation frequency). A review on the definition of various breakdown voltages will be also presented along with device parameters that affect the breakdown voltages. Firstly, the DC characteristics are described in terms of the collector current and current gain, with focus on the comparison with Si BJTs and the origin of the advantages. In this chapter, a brief overview of SiGe HBTs is provided. Since its first demonstration in 1987, SiGe HBTs have become a mainstream Si bipolar transistor and are now widely employed for various high-frequency applications. SiGe HBTs (heterojunction bipolar transistors) are a type of Si-based BJTs (bipolar junction transistors) that employ a SiGe alloy layer as a part of the device, typically as the base layer.

Lowest leakage bipolar transistor